Abstract
This paper reports on two studies of vapor-phase epitaxy on InP substrates. The first deals with the growth of lattice-matched GaInAsP alloys, using PCl 3 and AsCl 3 as the sources of the Group V elements. The deposition of an alloy is regarded as the deposition of a mixture of GaAs, InP and InAs. Any alloy composition can be obtained by adjusting the relative amounts of the three compounds that are deposited on the substrate. Alloy layers with energy gaps of about 1 eV have been grown with lattice mismatch as low as 0.16%. The layers are n-type with highest mobility at 77 K of 5800 cm 2 V -1 s -1. In the second study the growth rate of InP epilayers has been investigated as a function of substrate orientation. For the principal low-index planes, the relative growth rates decrease in the order {110} > {100} > {111}A > {111}B. By utilizing the anisotropy in growth rates, single-crystal InP sheets have been grown over phosphosilicate glass masks.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
