Abstract
With the increasing demand for multispectral information acquisition, infrared multispectral imaging technology that is inexpensive and can be miniaturized and integrated into other devices has received extensive attention. However, the widespread usage of such photodetectors is still limited by the high cost of epitaxial semiconductors and complex cryogenic cooling systems. Here, we demonstrate a noncooled two-color infrared photodetector that can provide temporal-spatial coexisting spectral blackbody detection at both near-infrared and mid-infrared wavelengths. This photodetector consists of vertically stacked back-to-back diode structures. The two-color signals can be effectively separated to achieve ultralow crosstalk of ~0.05% by controlling the built-in electric field depending on the intermediate layer, which acts as an electron-collecting layer and hole-blocking barrier. The impressive performance of the two-color photodetector is verified by the specific detectivity (D*) of 6.4 × 109 cm Hz1/2 W−1 at 3.5 μm and room temperature, as well as the promising NIR/MWIR two-color infrared imaging and absolute temperature detection.
Highlights
Two-color infrared (IR) technology can identify targets in a complex environment by using the multispectral features of targets, and this technique has been widely used in information technology, life sciences, aerospace, and other fields[1,2,3,4,5]
P-type black phosphorus (bP) was combined with n-type MoS2 to form a bP/MoS2 p-n junction for MWIR detection; the bP/MoS2 p-n junction was transferred onto the etched window of p-type thin-film Si to form a MoS2/Si n-p junction for NIR detection, resulting in a vertical van der Waals (vdWs) heterostructure of bP/MoS2/Si
N-type MoS2 plays the role of electron collection and hole barrier layer, while p-type Si and bP are used to absorb NIR and MWIR radiation, respectively, resulting in spatially consistent two-color detection
Summary
Two-color infrared (IR) technology can identify targets in a complex environment by using the multispectral features of targets, and this technique has been widely used in information technology, life sciences, aerospace, and other fields[1,2,3,4,5]. As this technology has been developed, the main research direction has become the integration of two-color detection into single pixels without complex optical components[6] while solving the core problem of separating and detecting dual spectral information independently[7]. The band at the interface of the vdWs heterojunction can change abruptly with sharp
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