Abstract
Local temperature plays a key role in resistive switching random access memory devices. We have previously presented a method for measuring the local filament temperature on a nanometric scale using an MIS bipolar transistor structure. Here, a more detailed analysis of the method is presented. A new calibration technique improves the accuracy of the extracted temperature. Alternative device structures allow validation of the method by the extraction of temperature that equals the ambient temperature when no self-heating occurs as well as extension of the obtained temperature range. The accuracy, prospects, and limitations of the method are discussed.
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