Abstract
H2 and CO generation from graphite furnace components in a high-pressure liquid-encapsulated Czochralski (LEC) puller was studied in detail from the standpoint of reproducible contamination to the LEC charge (B2O3 encapsulant/GaAs melt). It has been found that H2 and CO contamination from the graphite furnace components varies widely according to the vacuum level as well as to the high-temperature duration time of the vacuum bakeout process. It has been concluded that controlling the vacuum bakeout condition is the key to achieving reproducible generation of H2 and CO during LEC GaAs single-crystal growth.
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