VA-3 Index-guided complementary self-aligned laser arrays by MOCVD

Abstract

Summary form only given. The self-aligned laser utilizes a built-in complex refractive index variation along the plane of the junction in order to stabilize the lateral optical mode. This index variation results from modal radiation loss into a low-bandgap high-refractive-index GaAs:n layer placed close to the active layer outside the stripe. Conventional self-aligned lasers are difficult to fabricate because they require a regrowth on a high composition AlGaAs layer within the stripe region. We have developed a complementary self-aligned structure which eliminates the difficulty associated with the regrowth interface by placing it outside the stripe region. The self-aligned laser lends itself nicely to incorporation into multi-element arrays because of its simple fabrication and excellent mode control characteristics. Here, we present results on single-stripe and six-stripe complementary self-aligned laser arrays fabricated using a conventional double heterostructure active region. These data indicate that a considerable reduction in threshold current as well as improved optical coupling can be expected in self-aligned arrays fabricated with a graded barrier quantum well active layer.