UV-Initiated Si–S, Si–Se, and Si–Te Bond Formation on Si(111): Coverage, Mechanism, and Electronics

Abstract

Diaryl and dialkyl chalcogenide molecules serve as convenient precursors to silicon–chalcogenide bonds, ≡Si–E–R groups, on silicon surfaces, where E = S, Se, and Te. The 254 nm light, coupled with gentle heating to melt and liquefy the chalcogenide precursors for 15 min, enables formation of the resulting silicon–chalcogenide bonds. R groups analyzed comprise a long alkyl chain, octadecyl, and a phenyl group. Quantification of substitution levels of the silicon-hydride on the starting ≡Si(111)–H surface by an organochalcogen was determined by XPS, using the chalcogenide linker atom as the atomic label, where average substitution levels of ∼15% were found for all ≡Si–E–Ph groups. These measured substitution levels were found to agree with 2-dimensional stochastic simulations assuming kinetically irreversible silicon–chalcogen bond formation. Due to the small bond angle about the chalcogen atom, the phenyl rings in the case of ≡Si–E–Ph effectively block otherwise reactive Si–H bonds, leading to the observed...