Abstract
We propose a ballistic, coherent transmission system that utilizes the magnetic and electric barriers as Boolean input variables to realize functions similar in principle to the conventional logic gates. For practical implementation of these functions, we propose to use a device construct based on the high-electron-mobility transistor (HEMT) with ferromagnetic (FM) and nonmagnetic (NM) metal gates deposited on top of the HEMT heterostructure. This device system can be manipulated to realize multiple logic functions such as OR, AND, and their inverse by applying different magnetic and electric field configurations on the FM and the NM gates. The charge transport simulation is based on the single particle effective mass Hamiltonian and ballistic charge transport. The calculation results demonstrate clear binary outputs corresponding to various logic functions, with “high” (“low”) state having transmission probability of T>90% (T<10%).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
