Abstract
The samples of thin film semiconductor compounds InSb, ZnTe and solid solutions based on them were obtained by vapor deposition of components on a dielectric substrate in a vacuum, followed by annealing and their surface properties in CO, O2 and NH3 gas atmospheres were investigated. Identification of the samples was carried out by X-ray diffraction techniques. In the temperature range 253 ÷ 403 K and a pressure range of 1÷12 Pa the gas adsorption was measured by piezoelectric microbalance technique. In order to establish the basic regularities of processes flowing on samples surface in addition to the electrophisical were used Infrared and Raman spectroscopic measurements. The resulting addiction “surface property - composition” is extreme and have allowed to determine solid solution InSb0,95-ZnTe0,05 as the most sensitive to the presence of ammonia, selective and this sample exhibits a negligible oxidation of surface.
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