Abstract
Nickel contamination inside nickel-metal-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) is an issue to fabricate high performance thin film transistors (TFTs). A simple and effective method for gettering Ni was proposed with ~5-nm-thick chemical oxide (chem-SiO2) as the etching stop layer, and 100-nm-thick amorphous Si as the gettering layer. Ni-gettering process was annealed at 550oC in N2 ambient for only 12 h to considerably reduce Ni-metal impurity within the NILC poly-Si film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
