Abstract
Epitaxial (100) CdTe layers have been grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) on Si(100) substrates misoriented 9° towards the (110) direction. A thin Ge buffer layer grown at low temperature followed by an interfacial layer of ZnTe was used to get high quality (100) CdTe. The layers were characterized by X-ray diffraction and optical microscopy. X-ray rocking curve with FWHM of about 260 arc sec has been obtained for a 4 μm thick CdTe layer. The results presented demonstrate a novel technique to grow high quality CdTe on Si in a single OMVPE reactor.
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