Abstract
It is shown that illumination of ohmic contacts to high-resistance cadmium telluride and gallium arsenide samples affects not only the transient resistance of the contact, but the bulk conductivity of samples by increasing the concentration of free charge carriers. The model explaining the increase in the volume conductivity of the sample under the illumination of the contact region is presented. The procedure for separate determination of the transient resistances of the ohmic contact and the sample volume, suitable for highresistance semiconductors, is proposed.
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