Abstract
A transparent indium tin oxide (ITO)/SiOx/ITO structure was fabricated at room temperature and its resistive switching behaviors were investigated. The average optical transmittance of the structure in the visible region was about 84%. The device demonstrated a unipolar resistive switching behavior. The X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometer results of the SiOx film indicated that many oxygen vacancies were within the SiOx film. From the switching behavior, the temperature coefficient of resistance, and the size effect of resistance, the resistive memory behavior can be explained based on conducting filaments composed of oxygen vacancies. The resistive switching behavior is then explained by the rupture and the formation of filaments near the top electrode.
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