Abstract
The application of poly(9-vinylcarbazole) (PVK) to make a composite with zinc oxide (ZnO) as the active layer has been reported. Unipolar resistive switching behaviors were observed from ITO/PVK + ZnO/Al memory devices. The reset voltages were higher than the set voltages. These devices present a low resistance state (LRS)/high resistance state (HRS) current ratio of 104 when read at −0.5 V, retaining the information for a time of 105 s. The bistable resistive switching behaviors were entirely steady within 104 cycles. The fitted results of I–V curves shown that the dominant conduction mechanisms in LRS and HRS were Ohmic conductive behavior and space-charge-limited current mechanism, respectively.
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