Abstract
A detailed analysis based on first-principlescalculations with self-energy corrections is combined with photoemission spectroscopy to determine the origin of features observed in reflectance anisotropy spectroscopy ~RAS! at semiconductor surfaces. Using the InP(001)(2 34) surface as a model case we obtain quantitative agreement between slab calculations and low-temperature RAS measurements. We find the contributions to the anisotropy signal related either directly to surface states or to transitions between surface perturbed bulk wave functions. Our results demonstrate the high sensitivity of RAS to the surface structure and chemistry and show that the absorption processes causing the anisotropy signal take place in the uppermost few atomic layers of the substrate.
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