Abstract
The present paper is a detailed study on the deposition of Sb2Se3 thin films by electrochemical atomic layer epitaxy (EC-ALE). The related electrochemical aspects have been deeply investigated by means of cyclic voltammetry, anodic potentiodynamic scanning, and coulometry. The UPD layer of Se was obtained by first depositing both UPD Se and a small amount of bulk Se and then stripping the redundant bulk Se in blank solutions. A “two times rinsing” method was developed to avoid the formation of red Se during the rinsing process. The deposition parameters were determined for the first three EC-ALE cycles, and from these values, a nanofilm containing Sb and Se atoms has been obtained. By scanning electron microscopy and coulometry, it was shown that the deposit is compact and it has a stoichiometry very close to that of Sb2Se3. The Raman spectral analyses show that the deposit is made of Sb2Se3 nanoclusters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
