Abstract
Grazing incidence X‐ray reflectivity (GIXR), ellipsometry and X‐ray photoelectron spectroscopy (XPS) have been used for measuring the thickness of ultrathin SiO2 films on Si(100). SiO2 films were fabricated at a constant temperature to obtain a fixed interface structure for films with different thicknesses. The thicknesses obtained by GIXR and ellipsometry were in good agreement with each other, however, ellipsometry showed slightly larger values. The thickness of the adsorbed overlayer was also compared using GIXR and XPS. Uncertainties included in the XPS measurements of the carbonaceous layer thickness were estimated. The thicknesses of the carbonaceous layer obtained by XPS were slightly smaller, by about 0.16 nm, than those of the adsorbed overlayer obtained by GIXR. About 0.3–0.4 monolayer of adsorbed water molecules is believed to account for the differences in overlayer thicknesses between the GIXR and XPS measurments.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.