Abstract
We report studies of infrared emitters with positive and negative contrast for the 8–12 μm spectral range. The operating principle is based on modulation of semiconductor thermal emission in charge carrier injection and exclusion modes. The sources, made of Ge, have semitransparent n–p or p +–p contacts on the radiating face. This makes it possible to realise vertical output of radiation and uniform emission from the working area of emitter. The results of investigations of the principal characteristics of the sources are presented, and practical aspects of their application in infrared engineering are discussed.
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