Abstract
Pulsed laser irradiation at 248 nm can ablate Si atoms from a Si (100) wafer. The mechanism of this photoablation has been examined by a laser-induced fluorescence analysis of the Si products. The measured Si atoms were shown to leave the wafer surface with an average translational energy of 2.5 kcal/mol. The distribution of the translational energy is well described by a theoretical model for non-cascade ablation processes.
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