Abstract
Ultrasonic attenuation and velocity changes of sintered SiC samples with 1, 2, and 3 wt% AIN as the sintering additives are investigated as a function of temperature at low temperatures. Below ∼1K, the velocity increases logarithmically with temperature (lnT dependence). This lnT dependence of the velocity is one of the characteristics of amorphous materials. The results are analysed in terms of Two Level Tunneling System (TLS) model for amorphous solids. For comparison, sintered AlN was also studied and it was found that no detectable lnT dependence of velocity exists in this material. Available results suggest the existence of a relation between the disorder characterized by TLS detected at low temperatures and a reduction in the thermal conductivity at and above room temperature.
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