Abstract
Highly linear InP-based HEMTs have been obtained for the first time by optimising the pulse profile of a double pulse doped AlInAs/GaInAs/InP layer structure. The two-tone measurements performed at f/sub 1/=4.5 GHz and f/sub 2/=4.51 GHz yielded a third-order intercept (IP3) of 31.5 dBm on a 50 /spl mu/m-wide InP HEMT device. The linearity figure of merit (LFOM), defined as IP3/P/sub dc/, was 41.
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