Abstract
Highly selective etching of a silicon dioxide layer using a very thin physical-vapor-deposited amorphous carbon layer (PVD-ACL) was investigated in a dual-frequency superimposed capacitively coupled plasma etcher. The following process parameters of the /Ar plasmas were manipulated: flow ratio, high frequency (HF) power , and low frequency power . A wide processing window existed to produce the ultrahigh etch selectivities of a layer using the patterned PVD-ACL mask. The etch gas flow ratio played a critical role in determining the process window for ultrahigh silicon oxide/ ACL etch selectivity due to the disproportionate change in the degree of polymerization on the and ACL surfaces. Etching of the ArF photoresist/bottom antireflective coating (BARC)//ACL/silicon-oxide-stacked structure allows the use of a very thin PVD-ACL as an etch mask layer for the etching of high aspect ratio silicon dioxide patterns.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
