Abstract
The modification of a Ge delta layer in Si during 2 keV O 2 + sputter depth profiling was studied. After exposure to various O 2 + doses, the Ge profiles were measured using ultra-high resolution Rutherford backscattering spectrometry (RBS) and ultra-high resolution secondary ion mass spectrometry (SIMS). We observed that the Ge distribution broadened when the penetrating ions were able to reach the delta layer. A few nanometers after the maximum in sputtering of Ge, the dilute limit was reached: the shape of the remaining Ge profile was constant, the profile diminished in intensity and shifted as fast as the surface eroded.
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