Abstract
The physics of highly excited semiconductors has recently been the subject of many studies, especially in connection with the problem of pulsed laser annealing. Careful experiments [1–3] have now been performed with the temporal resolution required to demonstrate that one single picosecond or femtosecond pulse can produce melting at the surface of silicon. Since the carrier relaxation time is very short ( 1020 cm−3) and hot (Te > 2000°K) plasma close to but below the melting phase transition in Si and GaAs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
