Ultra-rapid microwave-assisted synthesis of gallium doped zinc oxide for enhanced photocurrent generation

Abstract

Ultra-rapid microwave-assisted hydrothermal synthesis was performed, zinc oxide nanoparticles were fabricated and doped with gallium. Different times (5, 15, and 30 min) and concentrations of doped Ga (1, 3, and 6%) were used to improve their characteristic properties. In addition, the relation between time/dopant was analyzed. The samples were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and UV–Vis diffuse reflectance spectroscopy. Photoluminescence (PL) to verify number of defects. SEM analysis showed the formation of nanorods morphology even with a short synthesis time. The X-ray diffractograms and Raman spectra suggest the successful insertion of Ga into the ZnO lattice. The crystallite size obtained by doping was between 36 and 50 nm. The lattice parameters determined by the Rietveld refinement confirmed the formation of a wurtzite hexagonal structure. The band gap range found was 3.12–3.22 eV, which increases the potential of ZnO for optical applications. The presence of defects as result of doping was confirmed by PL. The microstructural changes of the material are enhanced by doping, which causes the photocurrent to increase from 0,002 to 0.012 mA/cm2 in doped ZnO. The synthesis time and Ga doping facilitated the production of ZnO nanoparticles with improved properties.