Abstract
ABSTRACTThe use of Q-switched laser melting techniques to investigate new rapid solidification phenomena is described. It has been found that Si, Ge, GaP and GaAs can give rise to orientation dependent, kinetically-controlled defect generation processes during fast recrystallization from the melt. Indeed, these materials yield amorphous phases at sufficiently high solidification rates. Ultra-fast pulsed melting permits the study of the basic thermodynamic properties of amorphous solids. It is shown that amorphous Si melts to give a normal, low viscosity, undercooled liquid and that novel explosive crystal growth processes can occur in this low temperature regime.
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