Abstract
Near-infrared photodetectors were fabricated by incorporating formamidinium lead iodide (FAPbI3) quantum dots (QDs) as the light-harvesting layer. Through systematic optimization of the device architecture, high device performance was achieved by utilizing PCBM as the electron transport material and a 50 nm-thick TAPC film as the hole transport layer. The energy level alignment between PCBM and the FAPbI3 QDs enabled efficient exciton dissociation and hole blocking, while the optimized TAPC thickness decrease current leakage pathways. The resulting photodetectors exhibited an impressive external quantum efficiency of 59.56 % at 750 nm, along with a high specific detectivity of 2.63 x 1011 Jones. A broadband photoresponse from 300–900 nm was observed, as well as a fast temporal response with 30.58/31.26 μs rise/fall times. A substantial linear dynamic range of 61.5 dB was achieved under 780 nm illumination. Furthermore, the low dark current densities facilitated by the judiciously selected materials and thicknesses contributed to the excellent overall device performance. The device performance of the PCBM/FAPbI3 QDs/TAPC system demonstrate its promising potential for near-infrared optoelectronic applications requiring high sensitivity, speed, and broad spectral response, opening up opportunities for further advances in photodetection as well as other relevant device technologies.
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