Abstract
Electron-irradiation-induced gold-atom implantation into an α-SiC substrate has been studied by a combination of UHVEM and AES. Bilayer films of Au(target atoms)/α-SiC(substrate) were irradiated with a 2 MeV electron beam incident on the gold layer in a UHVEM. The irradiation temperature employed was 343 K, which is well above the critical temperature T c for the crystalline-to-amorphous (C-A) transition in α-SiC. With irradiation, gold atoms which have been knocked-off from the gold layer by the collision with 2 MeV electrons are implanted into the α-SiC substrate, and make preferential bonding to silicon atoms. As a result of this implantation, an amorphous phase is produced in the gold-implanted region.
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