Abstract
The growth of large-size single crystals of aluminium nitride has been obtained by UHV reactive rf-sputtering at high temperature (1050 °C). The growth mode was studied in situ by electron spectroscopy (HREELS, LEED) and by ex-situ High Resolution Transmission Electron Microscopy (HRTEM). The deposition of a buffer layer at lower temperature (700 °C) yielded a thick mosaic layer with a very low surface roughness. Electron microscopy has evidenced the presence of a thin interfacial layer composed of small and slightly misoriented domains, suggesting therefore a 3-D growth of the layer before the temperature transition; it has also confirmed the very good crystalline quality of the final thick film: the constituent domains of the film are large (100 nm) and their respective misorientation is less than 0.1 degree.
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