Abstract
Thin films of tin sulphide were prepared at varying thicknesses with a deposition rate of 2nm/s using the thermal evaporation method. Some films were then dipped in a solution containing tin (IV) chloride in methanol (SnCl <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> /CH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> OH) at varying concentrations and then annealed in air at annealing temperatures ≥ 400 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C and annealing times ≥ 60 min. The effects of the treatments on the structural, optical and electrical properties of the layers were investigated. The structural, optical and electrical properties of the as-deposited layers exhibited a thickness dependent behaviour. It was found that the SnCl <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> /CH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> OH heat treatments convert the SnS layers from p-type to n-type in a controllable way. This process could be used to produce SnS homojunction solar cells or to passivate the grain boundaries in p-type SnS layers.
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