Abstract
Vertical junction gate FET's are new high power devices. They show triode-like characteristics which are different from conventional FET's. In this paper, triode-like operation of V-FET's is studied using two-dimensional numerical analysis. The analysis shows that the depletion of the channel by the gate potential is a prerequisite for triode-like operation. It also shows that the gate spacing d and gate-drain length lgd have a great influence on the operation of V-FET's. The transition from triode- to pentode-like characteristics is brought about by increasing d or lgd. Avalanche breakdown voltage depends strongly on the electric field distribution and is also a good problem of the two-dimensional analysis. Design criteria for V-FET's are discussed with respect to triode-like operation and breakdown.
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