Abstract
A write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> /p-type Si diode. A large increase in the reverse current of the diode could be achieved with a negative charging voltage, e.g., charging at <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$-$</tex></formula> 25 V for 1 ms results in a current increase by about four orders. Memory states of the WORM device could be altered by changing the current conduction with charge trapping in the Al-rich <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> layer. The memory exhibited good reading endurance and retention characteristics.
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