Abstract
In this paper, a two-temperatures photothermoelastic interactions in an infinite semiconductor medium with a spherical cavity were studied using mathematical methods. The cavity internal surface is traction free and the carrier density is photogenerated by boundary heat flux with an exponentially decaying pulse. Laplace transform techniques are used to obtain the exact solution of the problem in the transformed domain by the eigenvalue approach and the inversion of Laplace transforms has been carried numerically. Numerical computations have been also performed for a silicon-like semiconductor material.
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