Abstract
ZnO is a versatile semiconductor material and is suitable for application in UV and gas sensors, photocatalysts, dye-sensitized solar cells, and in electronic devices such as LEDs and varistors. In this work, samples of nanostructured ZnO-based varistor compositions doped with 1mol% of Sb2O3 and 0.5mol% of bismuth, cobalt, manganese and chromium oxides were processed by the two-step microwave sintering technique. The samples were heat-treated at 1050, 1100 and 1150°C for 1min, applying heating rates of 100°C/min, then cooled at 50°C/min to 850 and 900°C, at which temperature they were held for 10, 30 and 60min. The microstructure, density and electrical properties were analyzed. Samples with 96% of theoretical density and an average grain size smaller than 2.1µm were obtained. The samples exhibited enhanced electrical properties, such as coefficient of nonlinearity and breakdown electric field higher than 30 and 9kV/cm, respectively, and leakage current lower than 70µA.
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