Abstract
A two-step growth approach based on facet-controlled epitaxial lateral growth and the application of silica nanospheres was established to enhance the performance of GaN based light-emitting diodes (LEDs). In the first step, open inverted honeycomb cones (IHCs) were fabricated. These IHCs were filled with silica nanospheres and a second growth step was performed. As compared to LEDs fabricated on IHC templates, 2.7 fold electroluminescence (EL) intensity was obtained for silica nanospheres-stacked IHC due to improved crystal quality and light scattering at silica nanospheres. Simulation of emission intensity was carried out to determine the effect of dislocation density reduction on EL enhancement of the LEDs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
