Abstract
Three-dimensional bulk modification of dielectric materials by multiphoton absorption of laser pulses is a well-established technology. The use of multiphoton absorption to machine bulk silicon has been investigated by a number of authors using femtosecond laser sources. However, no modifications confined in bulk silicon, induced by multiphoton absorption, have been reported so far. Based on results from numerical simulations, we employed an erbium-doped fiber laser operating at a relatively long pulse duration of 3.5 nanoseconds and a wavelength of 1549 nm for this process. We found that these laser parameters are suitable to produce modifications at various depths inside crystalline silicon.
Highlights
Within the research on the interaction of laser beams with materials, the three-dimensional machining of transparent dielectric materials has received considerable attention [1,2,3,4,5,6,7,8]
The aim of the current study is to develop a multiphoton subsurface modification method that is suitable for crystalline silicon
The feasibility of creating subsurface modifications in crystalline silicon using a combination of a 1549 nm wavelength and a pulse duration of 3.5 ns was investigated
Summary
Within the research on the interaction of laser beams with materials, the three-dimensional machining of transparent dielectric materials has received considerable attention [1,2,3,4,5,6,7,8]. This process is referred to as the production of subsurface, bulk or internal modifications. Many optical applications of this method are based on laser-induced refractive index changes, which can be both positive and negative compared with the unmodified material [1]. Confined lasermaterial interaction may be used to generate pressures in the TPa range, to study the behavior of matter under extreme conditions [6,7,8]
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