Abstract
Zn–Se crystals are used to analyze prospects for application of two-photon confocal microscopy in the study of plane and volume interband and impurity luminescence in semiconductors. Such maps can be formed with a depth step and planar spatial resolution of several micrometers at distances of up to 1 mm from the surface. The method is used to detect luminescence-active inhomogeneities in crystals and study their structure and luminescence characteristics. Prospects for the application of the two-photon confocal microscopy in the study of direct-band-semiconductors and materials of the fourth group are discussed.
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