Abstract
We present a Silicon-based Charge-Coupled Device (Si-CCD) sensor applied as a cost-effective spectrometer for femtosecond pulse characterization in the Near Infrared region in two different configurations: two-Fourier and Czerny-Turner setups. To test the spectrometer's performance, a femtosecond Optical Parametric Oscillator with a tuning range between 1100 and 1700nm and a femtosecond Erbium-Doped Fiber Amplifier at 1582nm were employed. The nonlinear spectrometer operation is based on the Two-Photon Absorption effect generated in the Si-CCD sensor. The achieved spectrometer resolution was 0.6 ± 0.1nm with a threshold peak intensity of 2×106Wcm2. An analysis of the nonlinear response as a function of the wavelength, the response saturation, and the criteria to prevent it are also presented.
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