Abstract
We have carried out full band-structure-based studies of two-photon absorption coefficients in the GaN compound, and GaInN and GaAlN alloys. An accurate Hamiltonian and resulting wave functions and band structures are used in the calculations. The coefficients in GaN calculated without any adjustable parameters agree very well with recent experiments. We further show that the two-photon absorption coefficients can be increased or decreased by adding In or Al to the GaN compound. The spectral variation of the absorption coefficient can be explained in terms of the alloy-induced changes in the band gap and joint density of states.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
