Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

Abstract

In this work, we propose two threshold voltage (VTH) tuning methods for bulk FinFETs with replacement high-k metal gate. The first method is to perform a vertical implantation into fin structure after dummy gate removal, self-aligned forming halo & punch through stop pocket (halo & PTSP) doping profile. The second method is to execute P+/BF2+ ion implantations into the single common work function (WF) layer in N-/P-FinFETs, respectively. These two methods have been investigated by TCAD simulations and MOS-capacitor experiments respectively, and then integrated into FinFET fabrication successfully. Experimental results show that the halo & PTSP doping profile can reduce VTH roll off and total variation. With P+/BF2+ doped WF layer, the VTH-sat shift −0.43V/+1.26V for N-FinFETs and −0.75V/+0.11V for P-FinFETs, respectively, with gate length of 500nm. The proposed two methods are simple and effective for FinFET VTH tuning, and have potential for future application of massive production.