Two-exciton state in GaSb∕GaAs type II quantum dots studied using near-field photoluminescence spectroscopy
The authors report on the photoluminescence spectroscopy of a single GaSb∕GaAs type II quantum dot (QD) at 8K. A sharp exciton emission with a linewidth of less than 250μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons in a type II QD do not form a bound biexciton. The energies of the exciton and two-exciton states were calculated using an atomic pseudopotential model, which provides a quantitative description of the antibound nature of the two-exciton state in type II QDs.
24
- 10.1016/s1386-9477(99)00348-3
- May 1, 2000
- Physica E: Low-dimensional Systems and Nanostructures
130
- 10.1103/physrevlett.92.126402
- Mar 24, 2004
- Physical Review Letters
339
- 10.1103/physrevb.62.12963
- Nov 15, 2000
- Physical Review B
91
- 10.1063/1.1353818
- Mar 5, 2001
- Applied Physics Letters
1883
- 10.1103/physrevlett.83.4204
- Nov 15, 1999
- Physical Review Letters
490
- 10.1103/physrevlett.73.1138
- Aug 22, 1994
- Physical Review Letters
77
- 10.1002/(sici)1521-3951(200104)224:3<727::aid-pssb727>3.0.co;2-9
- Mar 19, 2001
- physica status solidi (b)
159
- 10.1103/physrevlett.91.177401
- Oct 20, 2003
- Physical Review Letters
132
- 10.1103/physrevb.68.035331
- Jul 30, 2003
- Physical Review B
328
- 10.1103/physrevb.59.5678
- Feb 15, 1999
- Physical Review B
- Research Article
20
- 10.1103/physrevb.77.241304
- Jun 13, 2008
- Physical Review B
Photoluminescence spectra measured on a type-II $\mathrm{Ga}\mathrm{Sb}∕\mathrm{Ga}\mathrm{As}$ quantum dot ensemble at high excitation power indicate a Mott transition from the low density state comprising of spatially indirect excitons to a high density electron-plasma state. Under the influence of a very high magnetic field, the electron-plasma that is formed at high excitation powers is transformed into magneto-excitons.
- Book Chapter
- 10.1007/978-3-319-95159-1_3
- Jan 1, 2018
We present an experimental and theoretical study about the carrier confinement geometry and topology in InAs/GaAsSb quantum dots. The investigated sample consists of a field-effect device embedding a single layer of dot-in-a-well InAs/GaAsSb nanostructures. These nanostructures exhibit large electron-hole dipole moments and radiative lifetimes under externally applied electric fields. Both phenomena are related to the type-II band alignment existing between the two materials which, in principle, could also result in a change of the hole orbital confinement topology from simply to doubly connected. The latter aspect will be confirmed by ensemble magnetophotoluminescence experiments at 4.2 K. The oscillations observed in the photoluminescence intensity and degree of circular polarization will be described by an axially symmetric \(\mathbf {k}\cdot \mathbf {p}\) model combining vertical electric and magnetic fields. Due to the large spin-orbit coupling of III-Sb nanostructures, the modulation of the orbital confinement geometry and topology reported here shall open a venue to control the spin dynamics by external voltages. This exciting idea will be theoretically discussed through band-effective models including spin-orbit coupling and anisotropic confinement effects.
- Research Article
4
- 10.1063/1.3129616
- May 15, 2009
- Journal of Applied Physics
We present a self-consistent model for the analysis of the carrier distribution, the band profile, and the transition energy of type-II aligned GaAs∕GaSb∕GaAs structures under optical excitation. The model considers the surface states as an electron reservoir, associated with pinning of the conduction band Fermi level at the midgap. In our model, the optical generated holes in the GaSb quantum well causes a potential well on one side of the GaSb layer, which can efficiently accommodate the optically generated electrons. Accordingly, we derive a relation connecting the excitation power to the carrier density. Using the relation and the effective triangular potential approximation, we obtain a simple formula for the transition energy shift as a function of the excitation power, which follows the cube-root rule quite well. The calculation allows the determination of the band offset of a type-II heterointerface by comparison with data from photoluminescence measurement. The result suggests the unstrained valence band offset of GaSb∕GaAs to lie between 0.5 and 0.55eV. We also present a simplified model for analyzing the electronic and optical properties of type-II heterostructures without the need of a self-consistent calculation.
- Research Article
8
- 10.1103/physrevb.86.161403
- Oct 10, 2012
- Physical Review B
We propose a model of magnetic polaron formation in semiconductor quantum dots doped with magnetic ions. A wetting layer serves as a reservoir of photogenerated holes, which can be trapped by the adjacent quantum dots. For certain hole densities, the temperature dependence of the magnetization induced by the trapped holes is reentrant: it disappears for some temperature range and reappears at higher temperatures. We demonstrate that this peculiar effect is not an artifact of the mean-field approximation and persists after statistical spin fluctuations are accounted for. We predict fingerprints of reentrant magnetic polarons in photoluminescence spectra.
- Research Article
17
- 10.1103/physrevb.86.115305
- Sep 4, 2012
- Physical Review B
The pumping intensity ($I$) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized due to the strain field in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear $I$ dependence of the PL intensity. At approximately $I\ensuremath{\ge}3\phantom{\rule{0.28em}{0ex}}\text{W}\phantom{\rule{0.16em}{0ex}}{\text{cm}}^{\ensuremath{-}2}$, additional bands with a nearly quadratic $I$ dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The experimentally obtained energies of the no-phonon transitions are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method.
- Research Article
- 10.1504/ijmatei.2014.064281
- Jan 1, 2014
- International Journal of Materials Engineering Innovation
This paper investigates a theoretical analysis of the inter-subband transition GaSb/GaAs quantum well infrared photodetector (QWIP) considering large valence band discontinuity. Performance parameters such as Eigen energy states, absorption coefficient as well as responsivity are obtained for bound to bound inter-subband transition of QWIP. The confinement energies for the first heavy- and light-hole states are obtained as 0.1718 eV and 0.4329 eV, respectively. A broad detection window of 2 to 5 μm with peak responsivity of about 53.8 μA/W at wavelength of 2.7 μm is obtained at 5 V bias voltage.
- Research Article
11
- 10.1039/c7ra02900d
- Jan 1, 2017
- RSC Advances
A study of certain defects in GaInNAs, and their passivation. The passivation process could lead to more efficient photovoltaic devices.
- Research Article
24
- 10.1039/c0cp02253e
- Jan 1, 2011
- Physical Chemistry Chemical Physics
The energetics and dynamics of multiply excited states in single material colloidal quantum dots have already been shown to exhibit universal trends. Here we attempt to identify similar trends in exciton-exciton interactions within compound colloidal quantum dots. For this end, we thoroughly review previously available data and also present experimental data on several newly synthesized systems, focusing on core/shell nanocrystals with a type-II band alignment. A universal condition for the transition from binding to repulsion of the biexciton (type-I-type-II transition) is established in terms of the change in the exciton radiative lifetime. A scaling rule is also presented for the magnitude of exciton-exciton repulsion. In contrast, we do not identify a clear universal scaling of the non-radiative Auger recombination lifetime of the biexciton state. Finally, a perspective on future applications of engineered multiexcitonic states is presented.
- Research Article
629
- 10.1021/nl404108a
- Feb 10, 2014
- Nano Letters
Cost effective hydrogen evolution reaction (HER) catalyst without using precious metallic elements is a crucial demand for environment-benign energy production. Molybdenum sulfide is one of the promising candidates for such purpose, particularly in acidic condition, but its catalytic performance is inherently limited by the sparse catalytic edge sites and poor electrical conductivity. We report synthesis and HER catalysis of hybrid catalysts composed of amorphous molybdenum sulfide (MoSx) layer directly bound at vertical N-doped carbon nanotube (NCNT) forest surface. Owing to the high wettability of N-doped graphitic surface and electrostatic attraction between thiomolybdate precursor anion and N-doped sites, ∼2 nm scale thick amorphous MoSx layers are specifically deposited at NCNT surface under low-temperature wet chemical process. The synergistic effect from the dense catalytic sites at amorphous MoSx surface and fluent charge transport along NCNT forest attains the excellent HER catalysis with onset overpotential as low as ∼75 mV and small potential of 110 mV for 10 mA/cm(2) current density, which is the highest HER activity of molybdenum sulfide-based catalyst ever reported thus far.
- Book Chapter
4
- 10.1016/b978-0-08-046325-4.00008-6
- Jan 1, 2008
- Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics
Chapter 8 - GaSb/GaAs Quantum Nanostructures by Molecular Beam Epitaxy
- Conference Article
- 10.1109/cleopr.1999.814698
- Aug 30, 1999
In nondegenerate FWM (NDFWM) experiments employing spectrally narrower pulses, we can limit the FWM processes to specific ones. Thus, NDFWM measurements will give new insights on the excitonic dynamics. In our previous study using spectrally-resolved DFWM techniques on a self-organized quantum-well material, (C/sub 6/H/sub 13/NH/sub 3/)/sub 2/PbI/sub 4/, it has been shown that two exciton states, including biexciton and weakly interacting two-exciton state, play an important role in FWM processes. However, the signals arising from various two-exciton states overlapped spectrally with each other in DFWM experiments. In this study, we have employed NDFWM techniques on (C/sub 6/H/sub 13/NH/sub 3/)/sub 2/PbI/sub 4/ to observe the contributions of two-exciton states separately.
- Research Article
34
- 10.1021/acs.jpcb.0c06732
- Jul 24, 2020
- The Journal of Physical Chemistry B
The engineering and manipulation of delocalized molecular exciton states is a key component for artificial biomimetic light harvesting complexes as well as alternative circuitry platforms based on exciton propagation. Here we examine the consequences of strong electronic coupling in cyanine homodimers on DNA duplex scaffolds. The most closely spaced dyes, attached to positions directly across the double-helix from one another, exhibit pronounced Davydov splitting due to strong electronic coupling. We demonstrate that the DNA scaffold is sufficiently robust to support observation of the transition from the lowest energy (J-like) one-exciton state to the nonlocal two-exciton state, where each cyanine dye is in the excited state. This transition proceeds via sequential photon absorption and persists for the lifetime of the exciton, establishing this as a controlled method for creating two-exciton states. Our observations suggest that DNA-organized dye networks have potential as platforms for molecular logic gates and entangled photon emission based on delocalized two-exciton states.
- Research Article
- 10.1016/0022-2313(95)00162-x
- Dec 1, 1995
- Journal of Luminescence
Two-exciton states with lattice relaxation in one-dimensional semiconductors
- Research Article
13
- 10.1103/physreva.65.033821
- Feb 26, 2002
- Physical Review A
We theoretically analyze the optical response from an ultrathin film built up of oriented molecular aggregates, the operating states of which are represented by Frenkel exciton states. A four-level model, involving transitions between the ground, one-exciton and two-exciton states, exciton-exciton annihilation from the two-exciton state as well as relaxation from the annihilation level back to the one-exciton and ground states, is used for describing the film optical response. It is proved that the exciton-exciton annihilation may act not as a destructive but, on the contrary, as a constructive factor tending towards the occurrence of bistability. In particular, the effect of inhomogeneous broadening of the exciton optical transition, preventing the bistable behavior, may be suppressed considerably due to a fast exciton-exciton annihilation.
- Research Article
- 10.5075/epfl-thesis-3109
- Jan 1, 2004
Near-field spectroscopy and theoretical modeling of disordered semiconductor quantum wires
- Research Article
8
- 10.1364/ol.33.002089
- Sep 10, 2008
- Optics Letters
Optical sectioning is performed by collecting the fluorescent emission of two-exciton states in colloidal quantum dots. The two-exciton state is created by two consecutive resonant absorption events, thus requiring unprecedented low excitation energy and peak powers as low as 10(5) W/cm(2). The depth resolution is shown to be equivalent to that of standard multiphoton microscopy, and it was found to deteriorate only slowly as saturation of the two-exciton state is approached, owing to signal contribution from higher excitonic states.
- Research Article
13
- 10.1063/1.1806540
- Oct 11, 2004
- Applied Physics Letters
We describe imaging spectroscopy of GaAs1−xNx∕GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35nm. In near-field photoluminescence spectra of a GaAs1−xNx∕GaAs(x=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1−xNx with a higher N concentration (x=1.2%).
- Research Article
82
- 10.1103/physrevb.55.5153
- Feb 15, 1997
- Physical Review B
The exciton and two-exciton states in semiconductor quantum dots much larger in size than the exciton Bohr radius are investigated, and the energies and oscillator strengths of several exciton and biexciton states are calculated. The presence of weakly correlated exciton-pair states are identified and these have a large oscillator strength increasing proportional to the volume of the quantum dot. These states are shown to play a crucial role in determining the nonlinear optical response of large quantum dots. The weakly correlated exciton-pair states are found to cause a cancellation effect in the third-order nonlinear optical susceptibility at the exciton resonance, providing a consistent understanding of the experimentally observed saturation of the mesoscopic enhancement of the excitonic optical nonlinearity. The excited-state absorption in quantum dots is also studied and the excitation of the weakly correlated exciton-pair states is found to dominate the spectrum. The spectral features in the pump-probe spectroscopy are predicted in detail. The biexciton binding energy and oscillator strength are obtained in good agreement with experimental results on CuCl quantum dots. Also, the good correspondence of the excited-state absorption spectra between the theory and experiments provides convincing evidence for the presence of the weakly correlated exciton-pair states.
- Research Article
70
- 10.1103/physrevb.49.7817
- Mar 15, 1994
- Physical review. B, Condensed matter
Excitonic nonlinearities in the weak-excitation limit condition are examined with time-integrated and time-resolved four-wave mixing (FWM). Below an excitation of 3\ifmmode\times\else\texttimes\fi{}${10}^{9}$ excitons/${\mathrm{cm}}^{2}$, coherent third-order processes prevail. Echo-type signals are observed in parallel and perpendicular polarization configurations. The coherent process induced by the two-photon coherence of the two-exciton state is attributable to signals in the perpendicular configuration. The polarization dependences of a temporal profile and the intensity of FWM signals are well explained with third-order perturbational analysis that takes into account the two-exciton states and inhomogeneity.
- Conference Article
- 10.1117/12.562197
- Apr 20, 2004
A four-level model, involving the ground, one-exciton and two-exciton states as well as a high-lying molecular term through which the two-exciton state annihilates, is used for analyzing the bistable optical response of a thin film built up of oriented molecular aggregates. We focus on the effects of inhomogeneous broadening of the exciton optical transitions and exciton-exciton annihilation on bistability of the thin film response. It turns out that the inhomogeneous broadening, preventing generally the occurrence of bistability, may be suppressed considerably due to a fast exciton-exciton annihilation.
- Conference Article
- 10.1364/up.1994.md.5
- Jan 1, 1994
The strong influence of exciton/exciton interaction on the nonlinear optical response of the 2D exciton in GaAs quantum wells has been demonstrated in several recent experimental studies. The theoretical model for the microscopic coupling mechanism is still the subject of controversy, however. In ref. [1], we have presented a model including a density dependent coupling between opposite spin excitons which assumes that the interaction results in a renormalization of the matrix elements, dephasing rates and energies of the transition from the single-exciton state to the two-exciton state with respect to the corresponding quantities for the single exciton transitions. In contrast, Wang et al. claim that all experimental observations are explained by a density induced dephasing rate and that biexciton states play no role [2]. Here we present a new 3-pulse degenerate-four-wave-mixing (DFWM) configuration which is able to differentiate between pure local field effects and biexcitonic contributions to the time-integrated signal. Experiments were performed on an almost homogeneously broadened GaAs/Al0.3Ga0.7As single QW (well width 20 nm, photoluminescence line 0.3 meV, homogenous linewidth 0.15 meV) in the backward reflection geometry. The sample was cooled to 10 K and excited by a sequence of three pulses (1.1 ps duration) with equal intensity, wave vectors k→1,k→2,k→3 and delays τ12 and τ13 between the second and first and the third and first pulse, respectively. The signal was monitored in the direction k→ s =k→1+k→2−k→3 which provides no signal for the chosen pulse length if local field and renormalization effects are negligible. The peak intensity of the time-integrated DFWM signal has been calculated by solving the optical Bloch for a system of two non-interacting two-level systems (2LS) with opposite circular polarization selection rules (local field effect) and for the renormalized four-level system (4LS) depicted in Fig. 1 which assumes the formation of biexcitons between excitons with opposite spins. The signal strength is proportional to the strength of the local field in the case of the 2LS and to the renormalization for the 4LS. The peak signal intensities expected for pure local field and pure biexction contributions are summarized in the second and third column of Table 1 for eight experimental configurations applying different linear and circularly polarized pulses. The values are normalized to the signal strength predicted for three parallel linearly polarized pulses. Close inspection of the data reveals remarkable differences of the peak amplitude with polarization geometry for the two coupling models.
- Research Article
2
- 10.1063/1.1523893
- Dec 22, 2002
- The Journal of Chemical Physics
The effect of the excited two-exciton state on the transition from the ground state to the third molecular state is studied for a three-level molecular aggregate. Based on a Green function technique, the analytical expression is given for the line shape of pump–probe differential spectrum. A redshift peak of the transition from the ground state to the third state has been found because of introducing the coupling of the excited two-exciton states to the third state. Further, the dependence of the spectra on the aggregate length shows that the delocalization length of the exciton is decreased with an increase in the coupling strength. This result indicates that the coupling induces the exciton localization, leading to the reduction of the effective molecular number in the molecular aggregates.
- Research Article
2
- 10.1088/1742-6596/741/1/012132
- Aug 1, 2016
- Journal of Physics: Conference Series
We present cantilever-probe based scanning near-field microscopy (SNOM) studies of GaInP microdisks resonators (radii R=2 um and quality factors Q∼1000) with embedded InP quantum dots (QDs) emitting at ∼750 nm. Near-field photoluminescence spectroscopy in collection regime, using side excitation from micro-objective, was used for imaging of whispering-gallery modes (WGMs) with a spatial resolution below the light diffraction limit. Using collection-illumination regime we imaged the position of single InP/GaInP QDs in microdisk.
- Conference Article
- 10.1117/12.2199053
- Oct 15, 2015
Multiple exciton generation (MEG) is an effect that semiconductor nanocrystals (NCs) quantum dots (QDs) generate multiple excitons (electron-hole pairs) through absorbing a single high energy photon. It can translate the excess photon energy of bandgap (Eg) into new excitons instead of heat loss and improve the photovoltaic performance of solar cells. However, the theories of MEG are not uniform. The main MEG theories can be divided into three types. The first is impact ionization. It explains MEG through a conventional way that a photogenerated exciton becomes multiple excitons by Coulomb interactions between carriers. The Second is coherent superposition of excitonic states. Multiple excitons are generated by the coherent superposition of single photogenerated exciton state with enough excess momentum and the two-exciton state with the same momentum. The third is excitation via virtual excitonic states. The nanocrystals vacuum generates a virtual biexciton by coulomb coupling between two valence band electrons. The virtual biexciton absorbing a photon with an intraband optical transition is converted into a real biexciton. This paper describes the MEG influence on solar photoelectric conversion efficiency, concludes and analyzes the fundamentals of different MEG theories, the MEG experimental measure, their merits and demerits, calculation methods of generation efficiency.
- Research Article
13
- 10.1088/1367-2630/15/2/025004
- Feb 1, 2013
- New Journal of Physics
Coherent multidimensional spectroscopy allows us to inspect the energies and the coupling of quantum systems. Coupled quantum systems—such as a coupled semiconductor quantum dot or pigments in photosynthesis—form delocalized exciton and two-exciton states. A technique is presented to decompose these delocalized wave functions into the basis of individual quantum emitters. This quantum state tomography protocol is illustrated for three coupled InAs quantum dots. To achieve the decomposition of the wavefunction, we combine the double-quantum-coherence spectroscopy with spatiotemporal control, which allows us to localize optical excitations at a specific quantum dot. Recently, a protocol was proposed for single exciton states (Richter et al 2012 Phys. Rev. B 86 085308). In this paper, we extend the method presented by Richter et al with respect to: the reconstruction of two-exciton states, a detailed analysis process of reconstruction and the effect of filtering to enhance the quality of the reconstructed wave function.
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