Two-exciton state in GaSb∕GaAs type II quantum dots studied using near-field photoluminescence spectroscopy

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The authors report on the photoluminescence spectroscopy of a single GaSb∕GaAs type II quantum dot (QD) at 8K. A sharp exciton emission with a linewidth of less than 250μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons in a type II QD do not form a bound biexciton. The energies of the exciton and two-exciton states were calculated using an atomic pseudopotential model, which provides a quantitative description of the antibound nature of the two-exciton state in type II QDs.

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CitationsShowing 10 of 30 papers
  • Open Access Icon
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  • Cite Count Icon 20
  • 10.1103/physrevb.77.241304
Excitonic Mott transition in type-II quantum dots
  • Jun 13, 2008
  • Physical Review B
  • Bhavtosh Bansal + 4 more

Photoluminescence spectra measured on a type-II $\mathrm{Ga}\mathrm{Sb}∕\mathrm{Ga}\mathrm{As}$ quantum dot ensemble at high excitation power indicate a Mott transition from the low density state comprising of spatially indirect excitons to a high density electron-plasma state. Under the influence of a very high magnetic field, the electron-plasma that is formed at high excitation powers is transformed into magneto-excitons.

  • Book Chapter
  • 10.1007/978-3-319-95159-1_3
From Dot to Ring: Tunable Exciton Topology in Type-II InAs/GaAsSb Quantum Dots
  • Jan 1, 2018
  • José M Llorens + 4 more

We present an experimental and theoretical study about the carrier confinement geometry and topology in InAs/GaAsSb quantum dots. The investigated sample consists of a field-effect device embedding a single layer of dot-in-a-well InAs/GaAsSb nanostructures. These nanostructures exhibit large electron-hole dipole moments and radiative lifetimes under externally applied electric fields. Both phenomena are related to the type-II band alignment existing between the two materials which, in principle, could also result in a change of the hole orbital confinement topology from simply to doubly connected. The latter aspect will be confirmed by ensemble magnetophotoluminescence experiments at 4.2 K. The oscillations observed in the photoluminescence intensity and degree of circular polarization will be described by an axially symmetric \(\mathbf {k}\cdot \mathbf {p}\) model combining vertical electric and magnetic fields. Due to the large spin-orbit coupling of III-Sb nanostructures, the modulation of the orbital confinement geometry and topology reported here shall open a venue to control the spin dynamics by external voltages. This exciting idea will be theoretically discussed through band-effective models including spin-orbit coupling and anisotropic confinement effects.

  • Research Article
  • Cite Count Icon 4
  • 10.1063/1.3129616
Analysis of GaAs∕GaSb∕GaAs structures under optical excitation considering surface states as an electron reservoir
  • May 15, 2009
  • Journal of Applied Physics
  • Hong-Wen Hsieh + 1 more

We present a self-consistent model for the analysis of the carrier distribution, the band profile, and the transition energy of type-II aligned GaAs∕GaSb∕GaAs structures under optical excitation. The model considers the surface states as an electron reservoir, associated with pinning of the conduction band Fermi level at the midgap. In our model, the optical generated holes in the GaSb quantum well causes a potential well on one side of the GaSb layer, which can efficiently accommodate the optically generated electrons. Accordingly, we derive a relation connecting the excitation power to the carrier density. Using the relation and the effective triangular potential approximation, we obtain a simple formula for the transition energy shift as a function of the excitation power, which follows the cube-root rule quite well. The calculation allows the determination of the band offset of a type-II heterointerface by comparison with data from photoluminescence measurement. The result suggests the unstrained valence band offset of GaSb∕GaAs to lie between 0.5 and 0.55eV. We also present a simplified model for analyzing the electronic and optical properties of type-II heterostructures without the need of a self-consistent calculation.

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  • Research Article
  • Cite Count Icon 8
  • 10.1103/physrevb.86.161403
Reentrant formation of magnetic polarons in quantum dots
  • Oct 10, 2012
  • Physical Review B
  • J M Pientka + 4 more

We propose a model of magnetic polaron formation in semiconductor quantum dots doped with magnetic ions. A wetting layer serves as a reservoir of photogenerated holes, which can be trapped by the adjacent quantum dots. For certain hole densities, the temperature dependence of the magnetization induced by the trapped holes is reentrant: it disappears for some temperature range and reappears at higher temperatures. We demonstrate that this peculiar effect is not an artifact of the mean-field approximation and persists after statistical spin fluctuations are accounted for. We predict fingerprints of reentrant magnetic polarons in photoluminescence spectra.

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  • Research Article
  • Cite Count Icon 17
  • 10.1103/physrevb.86.115305
Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
  • Sep 4, 2012
  • Physical Review B
  • P Klenovský + 9 more

The pumping intensity ($I$) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized due to the strain field in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear $I$ dependence of the PL intensity. At approximately $I\ensuremath{\ge}3\phantom{\rule{0.28em}{0ex}}\text{W}\phantom{\rule{0.16em}{0ex}}{\text{cm}}^{\ensuremath{-}2}$, additional bands with a nearly quadratic $I$ dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The experimentally obtained energies of the no-phonon transitions are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method.

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Theoretical analysis of GaSb/GaAs QWIP
  • Jan 1, 2014
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  • Md Aref Billaha + 1 more

This paper investigates a theoretical analysis of the inter-subband transition GaSb/GaAs quantum well infrared photodetector (QWIP) considering large valence band discontinuity. Performance parameters such as Eigen energy states, absorption coefficient as well as responsivity are obtained for bound to bound inter-subband transition of QWIP. The confinement energies for the first heavy- and light-hole states are obtained as 0.1718 eV and 0.4329 eV, respectively. A broad detection window of 2 to 5 μm with peak responsivity of about 53.8 μA/W at wavelength of 2.7 μm is obtained at 5 V bias voltage.

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  • Research Article
  • Cite Count Icon 11
  • 10.1039/c7ra02900d
The effect and nature of N–H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs
  • Jan 1, 2017
  • RSC Advances
  • C R Brown + 11 more

A study of certain defects in GaInNAs, and their passivation. The passivation process could lead to more efficient photovoltaic devices.

  • Research Article
  • Cite Count Icon 24
  • 10.1039/c0cp02253e
Energetics and dynamics of exciton–exciton interactions in compound colloidal semiconductor quantum dots
  • Jan 1, 2011
  • Physical Chemistry Chemical Physics
  • Zvicka Deutsch + 3 more

The energetics and dynamics of multiply excited states in single material colloidal quantum dots have already been shown to exhibit universal trends. Here we attempt to identify similar trends in exciton-exciton interactions within compound colloidal quantum dots. For this end, we thoroughly review previously available data and also present experimental data on several newly synthesized systems, focusing on core/shell nanocrystals with a type-II band alignment. A universal condition for the transition from binding to repulsion of the biexciton (type-I-type-II transition) is established in terms of the change in the exciton radiative lifetime. A scaling rule is also presented for the magnitude of exciton-exciton repulsion. In contrast, we do not identify a clear universal scaling of the non-radiative Auger recombination lifetime of the biexciton state. Finally, a perspective on future applications of engineered multiexcitonic states is presented.

  • Research Article
  • Cite Count Icon 629
  • 10.1021/nl404108a
Molybdenum Sulfide/N-Doped CNT Forest Hybrid Catalysts for High-Performance Hydrogen Evolution Reaction
  • Feb 10, 2014
  • Nano Letters
  • Dong Jun Li + 7 more

Cost effective hydrogen evolution reaction (HER) catalyst without using precious metallic elements is a crucial demand for environment-benign energy production. Molybdenum sulfide is one of the promising candidates for such purpose, particularly in acidic condition, but its catalytic performance is inherently limited by the sparse catalytic edge sites and poor electrical conductivity. We report synthesis and HER catalysis of hybrid catalysts composed of amorphous molybdenum sulfide (MoSx) layer directly bound at vertical N-doped carbon nanotube (NCNT) forest surface. Owing to the high wettability of N-doped graphitic surface and electrostatic attraction between thiomolybdate precursor anion and N-doped sites, ∼2 nm scale thick amorphous MoSx layers are specifically deposited at NCNT surface under low-temperature wet chemical process. The synergistic effect from the dense catalytic sites at amorphous MoSx surface and fluent charge transport along NCNT forest attains the excellent HER catalysis with onset overpotential as low as ∼75 mV and small potential of 110 mV for 10 mA/cm(2) current density, which is the highest HER activity of molybdenum sulfide-based catalyst ever reported thus far.

  • Book Chapter
  • Cite Count Icon 4
  • 10.1016/b978-0-08-046325-4.00008-6
Chapter 8 - GaSb/GaAs Quantum Nanostructures by Molecular Beam Epitaxy
  • Jan 1, 2008
  • Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics
  • Koichi Yamaguchi + 2 more

Chapter 8 - GaSb/GaAs Quantum Nanostructures by Molecular Beam Epitaxy

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