Two-Dimensional MoTe­2 PN Diode and CMOS Inverter By Atomic Layer Deposition-Induced Hydrogen Doping

Abstract

Recently, 2D transition metal dichalcogenides(TMDs) MoTe2 has shown outstanding properties for future electronic devices. Such TMD structures without surface dangling bonds make the 2D MoTe2 more favorable candidate than conventional 3D Si in a few nanometer scale. The band gap of thin MoTe2 appears close to that of Si and quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control charge carrier polarity of MoTe2, functional devices such as complementary metal–oxide–semiconductor (CMOS) inverter have not been reported. Here we demonstrate a 2D CMOS inverter in a single MoTe2 nanosheet by straightforward selective doping technique. In a single MoTe2 flake, initially p-doped channel was selectively converted to n-doped region with high electron mobility of 18 cm2/Vs by atomic layer deposition-induced H-doping. Our ultrathin CMOS inverter exhibited a high DC voltage gain of 29, AC gain of 18 at 1 kHz, and a low static power consumption of a few nW. Our results show a great potential of MoTe2 for future electronic devices based on 2D semiconducting materials Figure 1