Abstract
Two-dimensional effects on the current responsivity and response time of intrinsic quantum photoconductive infrared detectors are presented in detail. Deviations from first-order theory are shown to be pronounced for the case of devices of small optically sensitive area with planar electrodes. Expressions are derived that lend themselves to numerical calculations. Specific results are given for Hg 1− x Cd x Te detectors of various geometries and operating conditions. A novel structure for a photoconductive detector array with asymmetric contacts is proposed and analysed.
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