Abstract
A polycrystalline silicon (poly-Si) channel twin thin-film transistor (twin-TFT) nonvolatile memory (NVM) device with In-Ga-Zn-Ox (IGZO) as a storage layer is demonstrated. IGZO-FG twin-TFT NVM exhibits a large memory window ΔVth. A VCG at 18 V for 10 ms can achieve 5.6 V of ΔVth. An extrapolation of the memory window to ten years demonstrates that the stored charge still remains 65% of its initial value. Coupling ratio effect and gate length effect are discussed in detail. Such a low-temperature IGZO-FG twin-TFT NVM device is feasible for integration in IGZO-based display circuits for system-on-panel applications.
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