Abstract

The role of the alumina barrier layer thickness (δb) on the growth of Ni nanowires (NWs) in porous anodic alumina (PAA) hasbeen revealed. By varying the final anodization voltage to form dendritesat the bottom of the nanoporous structure, we are able to optimizeδb (in the 2–16 nm range), allowing us to obtain a Ni pore filling percentage (fp) of almost100% for δb = 10 nm. However, deviations from this optimalδb-value led to astrong decrease of fp. Moreover, an increase of the electrodeposition efficiency (EE) and NW homogeneity was also verified forδb up to 10 nm. Suchincrease in nominal δb leads to a consistent growth rate in all pores and consequently a complete and uniformnanopore filling. On the other hand, the decrease in electrodeposition efficiency visible forδb > 10 nmis related with hydrogen evolution and dielectric breakdown of the insulator layer due to the requiredhigh deposition voltages. Non-uniform NW growth is then visible, with the consequent decrease infp. The control of the pore filling and length homogeneity of the fabricated 1D metallicnanostructures, combined with the ability to adjust the pore dimensions of PAA, can bringnovel approaches for the fabrication of nano-objects and thus exciting new applications.

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