Abstract
The electrical characteristics of silicon-oxide-nitride-oxide-silicon (SONOS) flash memory with a 3D vertical silicon pillar structure were studied. As an alternative method for the formation of the tunneling oxide, nitrogen ion implantation was applied to thermally grown pure silicon dioxide with a low energy (5keV). The devices show significant improvement in the erase characteristics compared to conventional tunneling oxide. Secondary ion mass spectrometry was used to analyze the nitrogen distribution within tunnel oxide, and the improved erase properties can be attributed to the incorporation of about 4.8% nitrogen (2x10^2^1atoms/cm^3) into the tunnel oxide formed by nitrogen ion implantation.
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