Abstract
The group-IV-based ferromagnetic semiconductor Ge1−xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. In this study, we show the first successful observation of the tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) containing a group-IV ferromagnetic semiconductor, that is, in MTJs composed of epitaxially grown Fe/MgO/Ge0.935Fe0.065. We find that the p–d(t2) band in GeFe is mainly responsible for the tunneling transport. Although the obtained TMR ratio is small (∼0.3%), the TMR ratio is expected to be enhanced by suppressing leak current through amorphous crystal domains observed in MgO.
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