Abstract
AbstractOxynitride has been used to decrease leakage current of thin film SiO2. Combining with the band structures obtained from first‐principles simulations, tunneling currents through SiO2/silicon oxynitride stacks were calculated. SiO2/silicon oxynitride stacks can reduce leakage current at low oxide field but will fail at higher field. The threshold oxide field, which means that SiO2/silicon oxynitride stacks can not reduce the tunneling current when oxide field is higher than it, decreases with increased nitrogen concentration while the effective oxide thickness remains constant. Direct tunneling and defect‐assisted tunneling will be dominant for lower and higher nitrogen atom concentrations, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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