Abstract
This work focused on the impact of synthesis routes on the structural, microstructural, magnetic, electrical and dielectric characteristics of Mg1−x Zn x Fe2O4 (x = 0.00, 0.25, 0.50, 0.75, and 1.00) nanocrystals manufactured via the ceramic and green approach sol–gel route. The powder X-ray diffraction (XRD) analysis reveals that the entire synthesized ferrite solids crystallize in single phase spinel structure. The XRD outcomes highlight the impact of the synthesis routes and Zn2+ replacement on the morphology, crystallite size and structural parameters of magnesium nano-ferrites. The transmission electron microscopy (TEM) images illustrate that the process of synthesis causes extensive lessening of grain and crystallite sizes. The magnetic study reveals that the magnetic properties of magnesium ferrite can be tuned by zinc substitution. The saturation magnetization (Ms), retentivity (Mr), coercive force (Hc) and magneton number diminutions meaningfully with the replacement of diamagnetic Zn2+ ions in Mg-ferrite for both the synthesized systems. The deterioration of magnetic parameters with Zn2+ substitution can be clarified on the base of the random spin canting model. Likewise, the magnetic parameters, enhanced meaningfully for sol-gel derived samples this can be attributed due to decline of crystallite size effect. The DC electric resistivity displays NTCR behaviour like ideal semiconducting materials for all the produced samples. The DC resistivity values of sol-gel produced samples were found to be little bit higher than that of ceramic derived samples. The experimental dielectric constant as a function of frequency behaviour can be elucidated with the support of the heterogeneous model of the polycrystalline structure of ferrites. The dielectric constant and loss tangent decreases with Zn2+ content for both the systems. The dielectric constant enhances for sol-gel derived samples; however, lower values of loss tangent were found. The obtained outcomes can be suitable for multifunctional applications in electronics devices and biomedical field.
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