Abstract
Spatial charge distribution for biased semiconductors fundamentally differs from metals since they can allow inhomogeneous charge distributions due to penetration of the electric field, as observed in the classical Schottky junctions. Similarly, the electrostatics of the dielectric/semiconductor interface can lead to a carrier depletion or accumulation in the semiconductor side when under applied bias. In this study, we demonstrate that the inhomogeneous carrier accumulation in a moderately p-doped GaAs–dielectric interface can be tailored for tunable plasmonics by an external voltage. Solving Maxwell’s equations in the doped GaAs-dielectric stack, we investigate the tunability of the surface plasmon and phonon polaritons’ interaction via an external bias. The plasmonic mode analysis of such an interface reveals interesting dispersion curves for surface plasmon and phonon polariton interactions that are not possible in metals. We show that the plasmon dispersion curve can be engineered through an external bias using the inherent properties of the p-doped GaAs– dielectric interface.
Highlights
Our aim is to demonstrate that the charge distribution at a moderately doped DE–SC interface can be tailored by an external voltage, which leads to position dependency of a carrier density function that can exhibit a highly unconventional plasmonic response to incoming excitation
We showed that the plasmon dispersion curve can be engineered through an external bias using the inherent properties of the DE-SC interface
The main finding of this work is that the carrier distributions on a moderately p-doped GaAs layer interfacing a dielectric can be tailored using an external bias, allowing the tuning of SPPs and SPhPs interaction in the far IR regime
Summary
Our aim is to demonstrate that the charge distribution at a moderately doped DE–SC interface can be tailored by an external voltage, which leads to position dependency of a carrier density function that can exhibit a highly unconventional plasmonic response to incoming excitation. We hope that our results will lead to a better understanding and interpretation of the outcomes of previous works on similar systems as well identify new areas of study on resonance frequency control at DE-SC thin film stacks Under such inhomogeneous carrier distributions near a DE-SC interface (that can be controlled via an externally applied voltage), we derived the dispersion relations for plasmons and phonon interactions, providing the relevant plots for GaAs with p-type doping (pGaAs). In this manuscript, we obtained the results for a p-type GaAs as the SC material, the same concept can be extended to other SC material systems as well.
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