Abstract
THz electromagnetic waves resonantly excite plasmons in the two dimensional electron gas (2DEG) of high electron mobility transistors (HEMTs) via grating-gate couplers. These excitations can induce measureable photoresponse. Biasing the grating gate tunes the photoresponse via control of 2DEG carrier density. Plasmons are investigated here in an InGaAs/InP HEMT with a 9 μm period grating gate at 78 and 106 GHz free-space radiation and 4K sample temperature. The dependence of the photoresponse on applied Source-Drain bias is also investigated. The minimum noise equivalent power (NEP) is estimated to be 113 pW/Hz<sup>1/2</sup> , with maximum responsivity of 200 V/W. Such plasmonic alterations in channel conductance provide a means for voltage-tunable THz and sub-THz detectors or filters.
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